After recalling the standard mathematical formalism used to model disordered materials such as doped semiconductors, alloys, or amorphous materials, and classical results about random Schrödinger operators (Anderson localization), I will present a tight-binding model for computing the electrical conductivity of multilayer 2D materials. All these models fall into the scope of the mathematical framework, based on non-commutative geometry, introduced by Bellissard and collaborators to study the electronic properties of aperiodic systems.